BC859AW

The BC859AW is designed as one kind of PNP silicon AF transistor that has some points of features:(1)for AF input stages and driver applications; (2)high current gain; (3)low collector-emitter saturation voltage; (4)low noise between 30 Hz and 15 kHz.

The absolute maximum ratings of the BC859AW can be summarized as:(1)Collector-emitter voltage: 30 V;(2)Collector-emitter voltage: 30 V;(3)Collector-base voltage: 30 V;(4)Emitter-base voltage: 5 V;(5)Collector current: 100 mA;(6)Collector peak current: 200 mA;(7)Total power dissipation, TS = 115 °C: 250 mW;(8)Junction temperature: 150 ;(9)Storage temperature range:65 to 150 °C. If you want to know about the product more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.