Transistors Bipolar (BJT) Transistor 200mW
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Packaging : | Reel |
Part Number | BC857C |
Product Type | PNP |
VCEO (V) | -45 |
IC(A) | -0.1 |
ICM (A) | -0.2 |
PD (W) | 0.3 |
hFE Min | 420 |
hFE Max | 800 |
@I C (A) | -0.002 |
VCE(SAT) Max (mV) | -300 |
@ IC (A) | -0.01 |
@ IB (mA) | -0.5 |
fT Min (MHz) | 200 |
RCE (SAT) (m) | - |
The BC857C is a type of PNP general purpose transistors with two unique features:(1)low current;(2)low voltage.
There are some limiting values about BC857C.(1):emitter-base voltage open collector(VEBO) is 5 V max;(2):collector current (DC)(IC) is 100 mA max;(3):peak collector current(ICM) is 200 mA max;(4)peak base current(IBM) is 200 mA max;(5):total power dissipation(Ptot) is 250 mW max when Tamb is not higher than 25 °C;(6):storage temperature(Tstg) is -65°C min and +150°C max;(7):junction temperature(Tj) is 150°C max;(8):operating ambient temperature(Tamb) is -65°C min and +150°C max.
At the same time, there are also some characteristics about BC857C when Tj is 25°C unless otherwise specified.(1):collector cut-off current(ICBO) is -1 nA typ and -15 nA max when IE is 0,VCB is -30 V;(2):emitter cut-off current(IEBO) is 100 nA max when Ici s 0 and VEB is -5 V;(3):cllector-emitter saturation voltage(VCEsat) is -75 mV typ and -300 mV max when IC is -10 mA and IB is -0.5 mA;(4):base-emitter voltage(VBE) is -600 mV min,-650 mV typ and -750 mV max when IC is -2 mA,VCE is -5 V .