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BC857AF

Features: • Power dissipation comparable to SOT23• Low current (max. 100 mA)• Low voltage (max. 65 V).Application• General purpose switching and amplification especially in portable equipment.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO ...

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SeekIC No. : 004297434 Detail

BC857AF: Features: • Power dissipation comparable to SOT23• Low current (max. 100 mA)• Low voltage (max. 65 V).Application• General purpose switching and amplification especially in p...

BC857AF Data Sheet

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Part Number:
BC857AF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
• Low voltage (max. 65 V).


Application

• General purpose switching and amplification especially in portable equipment.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −30 V − −15 nA
IE = 0; VCB = −30 V; Tj = 150 °C − −5 nA
IEBO emitter cut-off current IC = 0; VEB = −5V − −100 nA
hFE DC current gain
BC856AF; BC857AF; BC858AF
BC856BF; BC857BF; BC858BF
BC857CF; BC858CF 		IC = −2 mA; VCE = −5V 125
220
420 		250
475
800		  
VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −200 mV
IC = −100 mA; IB = −5 mA; note 1 − −400 mV
VBE base-emitter voltage IC = −2 mA; VCE = −5V −600 −750 mV
IC = −10 mA; VCE = −5V − −820 mV
Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 2.5 pF
fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − MHz
F noise figure IC = −200 µA; VCE = −5 V; RS =2kΩ; f = 1 kHz; B = 220 Hz − 10 dB
Note
1. Pulse test: tp 300 µs; 0.02.


Description

PNP transistor BC857AF encapsulated in an ultra small SC-89 (SOT490) plastic SMD package.

NPN complements: BC846F, BC847F and BC848F series.




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