BC857

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Pinout






Specifications

PARAMETER	SYMBOL	BC856	BC857	BC858	BC859	BC860	UNIT
Collector-Base Voltage	VCBO	-80	-50	-30	-30	-50	V
Collector-Emitter Voltage	VCES	-80	-50	-30	-30	-50	V
Collector-Emitter Voltage	VCEO	-65	-45	-30	-30	-45	V
Emitter-Base Voltage	VEBO	-5					V
Continuous Collector Current	IC	-100					mA
Peak Pulse Current	IEM	-200					mA
Base Current	IBM	-200					mA
Base Current	IEM	-200					mA
Power Dissipation at Tamb =25°C	Ptot	330					mW
Operating and Storage	Tj:Tstg	-55 to +150					°C

Description

Bipolar transistors BC857, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)