Transistors Bipolar (BJT) SS GP XSTR PNP 65V
BC856BDW1T3: Transistors Bipolar (BJT) SS GP XSTR PNP 65V
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 65 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 150 at 10 uA at 5 V | Configuration : | Dual |
Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SC-88-6 |
Packaging : | Reel |
Technical/Catalog Information | BC856BDW1T3 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | 2 PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 380mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Frequency - Transistion | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-363 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BC856BDW1T3 BC856BDW1T3 |