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BC856B

Transistors Bipolar (BJT) Transistor 200mW

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SeekIC No. : 00208669 Detail

BC856B: Transistors Bipolar (BJT) Transistor 200mW

BC856B Data Sheet

floor Price/Ceiling Price

US $ .01~.02 / Piece | Get Latest Price
Part Number:
BC856B
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • Unit Price
  • $.02
  • $.01
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

· Ideally Suited for Automatic Insertion
· Complementary NPN Types Available (BC846-BC848)
· For Switching and AF Amplifier Applications




Specifications

Characteristic
Symbol
Value
Unit
Collector-Base Voltage BC856
BC857
BC858
VCBO
-80
-50
-30
V
Collector-Emitter Voltage BC856
BC857
BC858
VCEO
-65
-45
-30
V
Emitter-Base Voltage
VEBO
-0.5
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RJA
417
/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. uggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup "C" is not available for BC856.




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