Transistors Bipolar (BJT) Ep Trans PNP,0.1A,65V
BC856: Transistors Bipolar (BJT) Ep Trans PNP,0.1A,65V
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Packaging : | Reel |
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Parameter | Symbol | BC 856 |
Values BC 857 |
BC 858 BC 859 |
Unit |
Collector-emitter voltage | VCE0 | 65 | 45 | 30 | V |
Collector-base voltage | VCB0 | 80 | 50 | 30 | |
Collector-emitter voltage | VCES | 80 | 50 | 30 | |
Emitter-base voltage | VEB0 | 5 | 5 | 5 | |
Collector current | IC | 100 | mA | ||
Peak collector current | ICM | 200 | |||
Peak base current | IBM | 200 | |||
Peak emitter current | IEM | 200 | |||
Total power dissipation, T =71 | Ptot | 330 | mW | ||
Junction temperature | Tj | 150 | |||
Storage temperature range | Tstg | 65 . + 150 |