BC848/A/B/C

The BC848 is a type of NPN epitaxial silicon transistor which is suitale for automatic insertion in thick and thin-film circuits.There are some maximum ratings about BC848/A/B/C. (1): collector-emitter voltage(VCEO) is 30 Vdc; (2): collector-base voltage(VCBO) is 30 Vdc; (3): emitter-base voltage(VEBO) is 5.0 Vdc; (4): collector current-continuous(Ic) is 100 mAdc; (5): collector dissipation(Pc) is 310 mW; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about BC848/A/B/C when Ta is 25 unless otherwise noted.Off characteristics: (1): collector-emitter breakdown voltage(V(BR)CEO) is 30 Vdc min when Ic is 10 mA; (2): collector-emitter breakdown voltage(V(BR)CES) is 30 Vdc min when Ic is 10 uA and VEB is 0; (3): collector-base breakdown voltage(V(BR)CBO) is 30 Vdc min when Ic is 10 uA; (4): emitter-base breakdown voltage(V(BR)EBO) is 5.0 Vdc min when IE is 1.0 uA; (5): collector cutoff current(ICBO) is 15 nAdc max when VCB is 30 V; (6): collector cut-off current(ICBO) is 15 nA max when VCE is 30 V and IE is 0; (7): DC current gain(hFE) is 110 min and 800 max when VCE is 5 V and Ic is 2 mA; (8): collector emitter saturation voltage(VCE(sat)) is 90 mV typ and 250 mV max when Ic is 10 mA and IB is 0.5 mA; (9): collector base saturation voltage(VBE(sat)) is 700 mV max when Ic is 10 mA and IB is 0.5 mA; (10): base emitter on voltage(VBE(on)) is 580 mV min,660 mV typ and 700 mV max when VCE is 5 V and Ic is 2 mA; (11): current gain bandwidth product(fT) is 300 MHz typ when VCE is 5 V and Ic is 10 mA.

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