Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1...
BC847PN: Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit ...
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Characteristic |
Symbol |
Value |
Unit |
Power Dissipation (Note 1) |
Pd |
200 |
mW |
Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
625 |
°C/W |
Operating and Storage Temperature Range |
Tj, TSTG |
-65 to +150 |
°C |
Characteristic |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
50 |
V |
Collector-Emitter Voltage |
VCEO |
45 |
V |
Emitter-Base Voltage |
VEBO |
6.0 |
V |
Collector Current |
IC |
100 |
mA |
Peak Collector Current |
ICM |
200 |
mA |
Peak Emitter Current |
IEM |
200 |
mA |
Characteristic |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
-50 |
V |
Collector-Emitter Voltage |
VCEO |
-45 |
V |
Emitter-Base Voltage |
VEBO |
-5.0 |
V |
Collector Current |
IC |
-100 |
mA |
Peak Collector Current |
ICM |
-200 |
mA |
Peak Emitter Current |
IEM |
-200 |
mA |