BC847PN

Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1...

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SeekIC No. : 004297390 Detail

BC847PN: Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit ...

floor Price/Ceiling Price

Part Number:
BC847PN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in one package
Ultra-Small Surface Mount Package





Pinout






Specifications

Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RJA
625
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C

Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Emitter Current
IEM
200
mA

Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA






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