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Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1...

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SeekIC No. : 004297390 Detail

BC847PN: Features: Epitaxial Die ConstructionTwo internal isolated NPN/PNP Transistors in one packageUltra-Small Surface Mount PackagePinoutSpecifications Characteristic Symbol Value Unit ...

BC847PN Data Sheet

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Part Number:: BC847PN
Supply Ability:: 5000

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Upload time: 2024/9/27

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Product Details

Description

Features:

Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in one package
Ultra-Small Surface Mount Package

Pinout

Specifications

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 1)	P_d	200	mW
Thermal Resistance, Junction to Ambient (Note 1)	R_JA	625	°C/W
Operating and Storage Temperature Range	T_j, T_STG	-65 to +150	°C

Characteristic	Symbol	Value	Unit
Collector-Base Voltage	V_CBO	50	V
Collector-Emitter Voltage	V_CEO	45	V
Emitter-Base Voltage	V_EBO	6.0	V
Collector Current	I_C	100	mA
Peak Collector Current	I_CM	200	mA
Peak Emitter Current	I_EM	200	mA

Characteristic	Symbol	Value	Unit
Collector-Base Voltage	V_CBO	-50	V
Collector-Emitter Voltage	V_CEO	-45	V
Emitter-Base Voltage	V_EBO	-5.0	V
Collector Current	I_C	-100	mA
Peak Collector Current	I_CM	-200	mA
Peak Emitter Current	I_EM	-200	mA

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BC847PN

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