Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area· Reduced required PCB area· Reduced pick and place costs.Application· General purpose switching and...
BC847BVN: Features: · 300 mW total power dissipation· Very small 1.6 mm x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area...
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Part Number | BC847BVN |
Product Type | NPN + PNP |
VCEO (V) | 45 -45 |
IC(A) | 0.1 -0.1 |
ICM (A) | 0.2 -0.2 |
PD (W) | 0.15 |
hFE Min | 200 220 |
hFE Max | 450 475 |
@I C (A) | 0.002 -0.002 |
VCE(SAT) Max (mV) | 250 -300 |
@ IC (A) | 0.01 -0.01 |
@ IB (mA) | 0.5 -0.5 |
fT Min (MHz) | 300 200 |
RCE (SAT) (m) | - |
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | Collector-base Voltage |
open emitter |
- |
50 |
V |
VCEO | Collector-emitter Voltage |
open base |
- |
45 |
V |
VEBO | Emitter-base Voltage |
open collector |
- |
5 |
V |
IC | Collector Current (DC) |
- |
100 |
mA | |
ICM | peak collector current |
- |
200 |
mA | |
IBM | peak base current |
- |
200 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
||
Tj | junction temperature |
- |
150 |
||
Tamb | operating ambient temperature |
-65 |
+15 |
||
Per device | |||||
Ptot | total power dissipation |
Tamb 25; note 1 |
- |
300 |
mW |