Features: · Low collector capacitance· Low collector-emitter saturation voltage· Closely matched current gain· Reduces number of components and boardspace· No mutual interference between the transistors.Application· General purpose switching and amplification.PinoutSpecifications SYMBOL PA...
BC847BPN: Features: · Low collector capacitance· Low collector-emitter saturation voltage· Closely matched current gain· Reduces number of components and boardspace· No mutual interference between the transis...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | Collector-base Voltage |
open emitter |
- |
50 |
V |
VCEO | Collector-emitter Voltage |
open base |
- |
45 |
V |
VEBO | Emitter-base Voltage |
open collector |
- |
5 |
V |
IC | Collector Current (DC) |
- |
100 |
mA | |
ICM | peak collector current |
- |
200 |
mA | |
IBM | peak base current |
- |
200 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
||
Tj | junction temperature |
- |
150 |
||
Tamb | operating ambient temperature |
-65 |
+15 |
||
Per device | |||||
Ptot | total power dissipation |
Tamb 25; note 1 |
- |
300 |
mW |
The BC847BPN is a kind of NPN/PNP transistor pair in an SC-88; SOT363 plastic package whichcan be applitied in general purpose switching and amplification.
The features of BC847BPN can be summarized as (1)low collector capacitance; (2)low collector-emitter saturation voltage; (3)closely matched current gain; (4)reduces number of components and boardspace; (5)no mutual interference between the transistors.
The absolute maximum ratings of BC847BPN are (1)ICBO collector cut-off current IE = 0; VCB = 30 V: 15nA/IE = 0; VCB = 30 V; Tj = 150 °C: 5 A; (2)IEBO emitter cut-off current IC = 0; VEB = 5 V: 100 nA; (3)hFE DC current gain IC = 2 mA; VCE = 5 V: 200/450; (4)VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA: 100 mV/IC = 100 mA; IB = 5 mA; note 1: 300 mV; (5)VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA: 755 mV; (6)VBE base-emitter voltage IC = 2 mA; VCE = 5 V TR1 NPN: 580/655/700 mV, TR2 PNP: 600/655/750 mV; (7)Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz TR1 NPN: 1.5 pF/TR2 PNP: 2.2 pF; (8)Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz TR1 NPN: 11pF/TR2 PNP: 10pF; (9)fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz: 100MHz.