BC847BPN

Features: · Low collector capacitance· Low collector-emitter saturation voltage· Closely matched current gain· Reduces number of components and boardspace· No mutual interference between the transistors.Application· General purpose switching and amplification.PinoutSpecifications SYMBOL PA...

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SeekIC No. : 004297376 Detail

BC847BPN: Features: · Low collector capacitance· Low collector-emitter saturation voltage· Closely matched current gain· Reduces number of components and boardspace· No mutual interference between the transis...

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Part Number:
BC847BPN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Low collector capacitance
· Low collector-emitter saturation voltage
· Closely matched current gain
· Reduces number of components and boardspace
· No mutual interference between the transistors.





Application

· General purpose switching and amplification.




Pinout






Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO Collector-base Voltage
open emitter
-
50
V
VCEO Collector-emitter Voltage
open base
-
45
V
VEBO Emitter-base Voltage
open collector
-
5
V
IC Collector Current (DC)
-
100
mA
ICM peak collector current
-
200
mA
IBM peak base current
-
200
mA
Ptot total power dissipation
Tamb 25 °C
-
200
mW
Tstg storage temperature
-65
+150
Tj junction temperature
-
150
Tamb operating ambient temperature
-65
+15
Per device
Ptot total power dissipation
Tamb 25; note 1
-
300
mW

Note
1. Device mounted on an FR4 printed-circuit board.








Description

NPN/PNP transistor BC847BPN pair in an SC-88; SOT363 plastic package.

The BC847BPN is a kind of NPN/PNP transistor pair in an SC-88; SOT363 plastic package whichcan be applitied in general purpose switching and amplification.

The features of BC847BPN can be summarized as (1)low collector capacitance; (2)low collector-emitter saturation voltage; (3)closely matched current gain; (4)reduces number of components and boardspace; (5)no mutual interference between the transistors.

The absolute maximum ratings of BC847BPN are (1)ICBO collector cut-off current IE = 0; VCB = 30 V: 15nA/IE = 0; VCB = 30 V; Tj = 150 °C: 5 A; (2)IEBO emitter cut-off current IC = 0; VEB = 5 V: 100 nA; (3)hFE DC current gain IC = 2 mA; VCE = 5 V: 200/450; (4)VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA: 100 mV/IC = 100 mA; IB = 5 mA; note 1: 300 mV; (5)VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA: 755 mV; (6)VBE base-emitter voltage IC = 2 mA; VCE = 5 V TR1 NPN: 580/655/700 mV, TR2 PNP: 600/655/750 mV; (7)Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz TR1 NPN: 1.5 pF/TR2 PNP: 2.2 pF; (8)Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz TR1 NPN: 11pF/TR2 PNP: 10pF; (9)fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz: 100MHz.






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