Transistors Bipolar (BJT) 100mA 50V Dual
BC847BPDW1T1: Transistors Bipolar (BJT) 100mA 50V Dual
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Transistor Polarity : | NPN, PNP | Collector- Emitter Voltage VCEO Max : | 45 V |
Emitter- Base Voltage VEBO : | 6 V at NPN, 5 V at PNP | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 150 at 10 uA at 5 V | Configuration : | Dual |
Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
Characteristic | Symbol | Value | Unit | |
Collector-Emitter Voltage | BC846 BC847 BC848 |
VCEO | 65 45 30 |
V |
Collector-Base Voltage | BC846 BC847 BC848 |
VCBO | 80 50 30 |
V |
Emitter-Base Voltage | VEBO | 6.0 | V | |
Collector Current - Continuous | IC | 100 | mAdc |
Technical/Catalog Information | BC847BPDW1T1 |
Vendor | ON Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | SOT-363 |
Transistor Type | NPN + PNP |
Collector Emitter Voltage (Vceo) | 45.0 V [Max] |
Collector Base Voltage (Vcbo) | 50.0 V [Max] |
Emitter Base Voltage (Vebo) | 6.0 V [Max] |
Collector Current (Ic) | 100.00 mA [Max] |
Minimum DC Current Gain (hFE) @ Ic, Vce | 200 @ 2mA, 5V |
Saturation Voltage (Vce) @ Ib, Ic | 250mV @ 500A, 10mA |
Saturation Voltage (Vbe) @ Ib, Ic | 700mV @ 500A, 10mA |
Transition Frequency | 100.0 MHz [Nom] |
Power Dissipation | 380.000 mW [Max] |
Packaging | Tape & Reel, 7" |
Has Digi-Reel | FALSE |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BC847BPDW1T1 BC847BPDW1T1 |