Features: · For AF input stages and driver applications· High current gain· Low collector-emitter saturation voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packagePinoutSpecifications Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 65 V ...
BC846UPN: Features: · For AF input stages and driver applications· High current gain· Low collector-emitter saturation voltage· Two (galvanic) internal isolated NPN/PNP Transistors in one packagePinoutSpecifi...
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Parameter |
Symbol |
Value |
Unit |
Collector-Emitter Voltage |
VCEO |
65 |
V |
Collector-Base Voltage |
VCBO |
80 | |
Collector-emitter voltage |
VCES |
80 |
V |
Emitter-base voltage |
VEBO |
5 |
V |
DC collector current |
IC |
100 |
mA |
Peak collector current |
ICM |
200 | |
Total power dissipation, TS = 118 °C |
Ptot |
250 |
mW |
Junction temperature |
Tj |
150 |
|
Storage temperature |
TSTG |
-65 ... 150 |