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BC639,112: TRANSISTOR NPN 80V 1A TO-92

BC639,112 Data Sheet

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Part Number:: BC639,112
Mfg:
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	NPN	Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V	Power - Max:	830mW
Frequency - Transition:	180MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: 180MHz
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW

Parameters:

Technical/Catalog Information	BC639,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	830mW
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 5mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	180MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC639,112 BC639,112

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BC639,112

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