BC639RL1G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 25 at 5 mA at 2 V


Parameters:

Technical/Catalog Information	BC639RL1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC639RL1G BC639RL1G BC639RL1GOSCT ND BC639RL1GOSCTND BC639RL1GOSCT