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BC638,112: TRANSISTOR PNP 60V 1A TO-92

BC638,112 Data Sheet

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Part Number:: BC638,112
Mfg:
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	PNP	Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V	Power - Max:	830mW
Frequency - Transition:	100MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 60V
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW

Parameters:

Technical/Catalog Information	BC638,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	830mW
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC638,112 BC638,112

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BC638,112

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