BC638,112

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 60V
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW


Parameters:

Technical/Catalog Information	BC638,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	830mW
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC638,112 BC638,112