BC638

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 150 MHz


Features:

* High current (max. 1 A)
* Low voltage (max. 80 V).




Specifications

Rating	Symbol		Value	Unit
CollectorEmitter Voltage	VCEO	BC636	-45	Vdc
		BC638	-60	Vdc
		BC640	-80	Vdc
CollectorBase Voltage	VCBO	BC636	-45	Vdc
		BC638	-60	Vdc
		BC640	-80	Vdc
Emitter-Base Voltage	VEBO		-5.0	Vdc
Collector Current	IC		-0.5	Adc
Total Device Dissipation@ TA = 25 Derate above 25	PD		625 5.0	Watt mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD		12.5 100	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG		55 to +150

Parameters:

Technical/Catalog Information	BC638
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	150MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC638 BC638 BC638OS ND BC638OSND BC638OS