BC637_L34Z Selling Leads, Price trend , Fairchild Semiconductor, BC637_L34Z DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00210890 Detail

BC637_L34Z: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

BC637_L34Z Data Sheet

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Part Number:: BC637_L34Z
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	100 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40

Parameters:

Technical/Catalog Information	BC637_L34Z
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC637_L34Z BC637_L34Z

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BC637_L34Z

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