BC636TAR Selling Leads, Price trend , Fairchild Semiconductor, BC636TAR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00210667 Detail

BC636TAR: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

BC636TAR Data Sheet

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Part Number:: BC636TAR
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	45 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	100 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92-3 Kinked Lead
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 45 V
Maximum Operating Frequency : 100 MHz
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40

Parameters:

Technical/Catalog Information	BC636TAR
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	1A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC636TAR BC636TAR

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BC636TAR

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