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BC556B,112: TRANSISTOR PNP 65V 100MA TO-92

BC556B,112 Data Sheet

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Part Number:: BC556B,112
Mfg:
Supply Ability:: 5000

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Upload time: 2024/11/23

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US $.06 - .17 / Piece

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Transistors Bipolar (BJT) NPN 45V 100mA HFE/8

Product Details

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Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	PNP	Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	65V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V	Power - Max:	500mW
Frequency - Transition:	100MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Voltage - Collector Emitter Breakdown (Max): 65V
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Mounting Type: Through Hole
Power - Max: 500mW
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk

Parameters:

Technical/Catalog Information	BC556B,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500A, 10mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC556B,112 BC556B,112

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BC556B,112

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