Transistors Bipolar (BJT) 100mA 80V PNP
BC556BZL1G: Transistors Bipolar (BJT) 100mA 80V PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 65 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 180 at 2 mA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 280 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Ammo |
Technical/Catalog Information | BC556BZL1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500A, 10mA |
Frequency - Transition | 280MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Through Hole |
Package / Case | TO-92-3, TO-226AA (Formed Leads) |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BC556BZL1G BC556BZL1G |