BC556BZL1G

Transistors Bipolar (BJT) 100mA 80V PNP

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BC556BZL1G: Transistors Bipolar (BJT) 100mA 80V PNP

floor Price/Ceiling Price

Part Number:
BC556BZL1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 65 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 180 at 2 mA at 5 V Configuration : Single
Maximum Operating Frequency : 280 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Ammo
Maximum Operating Frequency : 280 MHz
Collector- Emitter Voltage VCEO Max : 65 V
DC Collector/Base Gain hfe Min : 180 at 2 mA at 5 V


Parameters:

Technical/Catalog InformationBC556BZL1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)65V
Current - Collector (Ic) (Max)100mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500A, 10mA
Frequency - Transition280MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Formed Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC556BZL1G
BC556BZL1G



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