BC447

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
Maximum DC Collector Current : 0.3 A
DC Collector/Base Gain hfe Min : 50 at 2 mA at 5 V


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	80 100	Vdc
CollectorBase Voltage	VCBO	80 100	Vdc
Emitter-Base Voltage	VEBO	5.0	Vdc
Collector Current	IC	300	mAdc
Total Device Dissipation@ TA = 25 Derate above 25	PD	625 5.0	Watt mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	1.5 12	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Parameters:

Technical/Catalog Information	BC447
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	300mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC447 BC447