BC372

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 0.1 uA
Power Dissipation : 625 mW
Emitter- Base Voltage VEBO : 12 V
Maximum DC Collector Current : 1 A
Package / Case : TO-92-3 (TO-226)


Specifications

Rating	Symbol	BC372	BC373	Unit
CollectorEmitter Voltage	VCEO	100	80	Vdc
CollectorBase Voltage	VCBO	100	80	Vdc
EmitterBase Voltage	VEBO	12		Vdc
Collector Current - Continuous	IC	1.0		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0		mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12		Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150		°C

Parameters:

Technical/Catalog Information	BC372
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	1A
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 250A, 250mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC372 BC372