BC369ZL1G

Transistors Bipolar (BJT) 1A 25V PNP

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SeekIC No. : 00203924 Detail

BC369ZL1G: Transistors Bipolar (BJT) 1A 25V PNP

floor Price/Ceiling Price

US $ .07~.25 / Piece | Get Latest Price
Part Number:
BC369ZL1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.25
  • $.14
  • $.12
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 50 at 5 mA at 10 V Configuration : Single
Maximum Operating Frequency : 56 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Ammo
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 50 at 5 mA at 10 V
Maximum Operating Frequency : 56 MHz (Min)


Features:

• Pb−Free Packages are Available*


Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
20
Vdc
CollectorBase Voltage
VCBO
25
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
1.0
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.



Parameters:

Technical/Catalog InformationBC369ZL1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)1A
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 10A
Frequency - Transition65MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Formed Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC369ZL1G
BC369ZL1G



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