BC368ZL1G

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Ammo
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 50 at 5 mA at 10 V
Maximum Operating Frequency : 56 MHz (Min)


Features:

• Pb−Free Packages are Available*


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	20	Vdc
CollectorBase Voltage	VCBO	25	Vdc
EmitterBase Voltage	VEBO	5.0	Vdc
Collector Current - Continuous	IC	1.0	mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0	mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12	Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150	°C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.


Parameters:

Technical/Catalog Information	BC368ZL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	1A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 10A
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC368ZL1G BC368ZL1G