BC338

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 0.8 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk


Specifications

			BC 337	BC 338
Collector-Emitter-voltage	B open	VCE0	45 V	25 V
Collector-Base-voltage	E open	VCB0	50 V	30 V
Emitter-Base-voltage	C open	VEB0	5 V
Power dissipation Verlustleistung		Ptot	625 mW 1)
Collector current Kollektorstrom (DC)		IC	800 mA
Junction temp. Sperrschichttemperatur		Tj	150°C
Storage temperature Lagerungstemperatur		TS	- 55.+ 150°C

Parameters:

Technical/Catalog Information	BC338
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BC338 BC338