BC327

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 45 V
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 0.8 A
Packaging : Bulk


Specifications

Parameter	Symbol	Value		Unit
		BC 327	BC 328
Collector-emitter voltage	VCEO	45	25	v
Collector-base voltage	VCBO	50	30
Emitter-base voltage	VEBO	5
DC collector current	IC	800		mA
Peak collector current	ICM	1		A
Base current	IB	100		mA
Peak base current	IBM	200
Total power dissipation, Tc = 66 °C	Ptot	625		mW
Junction temperature	TJ	150		°C
Storage Temperature	TSTG	-65 ...+150

Parameters:

Technical/Catalog Information	BC327
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Frequency - Transition	260MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC327 BC327 BC327OS ND BC327OSND BC327OS