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BC212B_J35Z

Transistors Bipolar (BJT) PNP GEN PURP XTOR

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SeekIC No. : 00211680 Detail

BC212B_J35Z: Transistors Bipolar (BJT) PNP GEN PURP XTOR

BC212B_J35Z Data Sheet

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Part Number:
BC212B_J35Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40 at 10 uA at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40 at 10 uA at 5 V


Parameters:

Technical/Catalog InformationBC212B_J35Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC212B_J35Z
BC212B_J35Z



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