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BC212B

Transistors Bipolar (BJT) PNP -50V -100mA HFE/400

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BC212B: Transistors Bipolar (BJT) PNP -50V -100mA HFE/400

BC212B Data Sheet

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Part Number:
BC212B
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 60


Specifications

Rating
Symbol
BC
212
BC
213
BC
214
Unit
CollectorEmitter Voltage
VCEO
-50
-30
-30
Vdc
CollectorBase Voltage
VCBO
-60
-45
-45
Vdc
EmitterBase Voltage
VEBO
-5.0
Vdc
Collector Current - Continuous
IC
-100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°C





Parameters:

Technical/Catalog InformationBC212B
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10A, 5V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC212B
BC212B



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