BC107

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 200
Package / Case : TO-18


Features:

The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177.

Specifications

Symbol	Parameter	Value		Unit
		BC107	BC108
VCBO	Collector-Base Voltage (IE = 0)	50	30	V
VCEO	Collector-Emitter Voltage (IB = 0)	45	20	V
VEBO	Emitter-Base Voltage (IC = 0)	6	5	V
IC	Collector Current	100		mA
Ptot	Total Dissipation at Tamb 25 at Tcase 25	0.3 0.75		W W
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature	175

Parameters:

Technical/Catalog Information	BC107
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	100mA
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 500A, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-18
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BC107 BC107 497 3116 5 ND 49731165ND 497-3116-5