DescriptionThe BBY52-05W is a type of silicon tuning diode which has two unique features: (1) high Q hyperabrupt tuning diode; (2) it is designed for low tuning voltage operation for VCO's in mobile communications equipment. There are some maximum ratings about BBY52-05W. (1): diode reverse voltag...
BBY52-05W: DescriptionThe BBY52-05W is a type of silicon tuning diode which has two unique features: (1) high Q hyperabrupt tuning diode; (2) it is designed for low tuning voltage operation for VCO's in mobile...
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The BBY52-05W is a type of silicon tuning diode which has two unique features: (1) high Q hyperabrupt tuning diode; (2) it is designed for low tuning voltage operation for VCO's in mobile communications equipment.
There are some maximum ratings about BBY52-05W. (1): diode reverse voltage(VR)is 7 V; (2): forward current(IF) is 20 mA; (3): operating temperature range(Top) is -55°C to 150°C; (4): storage temperature(Tstg) is -55°C to 150°C.
Otherwise,there are some AC characteristics BBY52-05W at Ta is 25,unless otherwise specified.(1): diode capacitance(CT) is 1.4 pF min, 1.85 pF typ and 2.2 pF max when Vr is 1 V and f is 1 MHz or is 0.95 pF min, 1.5 pF typ and 2 pF max when Vr is 2 V and f is 1 MHz; (2): capacitance ratio(CT1/CT4) is 1.1 min, 1.6 typ and 2.1 max when Vr is 1 V,Vr is 4 V and f is 1 MHz; (3): series resistance(rs) is 0.9 ohms typ and 1.7 ohms max when Vr is 1 V and f is 1 GHz; (4): case capacitance(Cc) is 0.1 pF typ when f is 1 MHz; (5): series inductance(Ls) is 1.4 nH typ.