Features: • Build in Biasing Circuit; To reduce using parts cost & PC board space.• Low noise; NF = 1.5 dB typ. at f = 900 MHz• High gain; PG = 24 dB typ. at f = 900 MHz• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 cond...
BB505C: Features: • Build in Biasing Circuit; To reduce using parts cost & PC board space.• Low noise; NF = 1.5 dB typ. at f = 900 MHz• High gain; PG = 24 dB typ. at f = 900 MHz•...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
6 |
V |
Gate1 to source voltage |
VG1S |
+6 0 |
V |
Gate2 to source voltage |
VG2S |
+6 0 |
V |
Drain current |
ID |
20 |
mA |
Channel power dissipation |
Pchnote3 |
250 |
mW |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |