Features: · Build in Biasing Circuit; To reduce using parts cost & PC board space.· Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.· Provide mini mold packages; MPAK-4R(SOT-143 va...
BB202M: Features: · Build in Biasing Circuit; To reduce using parts cost & PC board space.· Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)· Withstanding to ESD; Build in ESD absorbing diod...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate1 to source voltage |
VG1S |
+10 0 |
V |
Gate 2 to source voltage |
VG2S |
±10 |
V |
Drain current |
ID |
25 |
mA |
Channel power dissipation |
Pch |
150 |
mW |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |