Features: • For high speed switching applications• Common cathode• Internal (galvanic) isolated Diodes Arrays in one packageSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 70 V Peak reverse voltage VRM 70 V Forward curr...
BAV 70S: Features: • For high speed switching applications• Common cathode• Internal (galvanic) isolated Diodes Arrays in one packageSpecifications Parameter Symbol Value Unit...
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Parameter |
Symbol |
Value |
Unit |
Diode reverse voltage |
VR |
70 |
V |
Peak reverse voltage |
VRM |
70 |
V |
Forward current |
IF |
200 |
mA |
Surge forward current t = 1 s |
IFS |
4.5 |
A |
Total power dissipation, TS = 85 °C |
Ptot |
250 |
mW |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
- 65 ...+150 |
°C |
Junction - ambient 1) |
RthJA |
530 |
K/W |
Junction - soldering point |
RthJS |
260 |
K/W |