BAV99W

The BAV99W is a type of silicon switching diode which has two unique features: (1) for high-speed switching applications; (2) seris pair configuration.

There are some maximum ratings about BAV99W at Ta is 25,unless otherwise specified. (1): diode reverse voltage(VR) is 80 V; (2): peak reverse voltage(VRM) is 85; (3): forward current(IF) is 200 mA; (4): non-repetitive peak surge forward current(IFSM) is 4.5 A when t is 1 us; (5): total power dissipation(Ptot) is 250 mW when Ts is not higher than 110; (6): storage temperature(Tstg) is -55°C +85°C; (7): operating junction temperature(Tj) is -55°C +85°C.

Otherwise,there are also some electrical characteristics about BAV99W when Tj is 25, unless otherwise specified. (1): breakdown voltage(V(BR)) is 85 V min when I(BR) is 100 uA; (2): reverse current(IR) is 0.15 uA max when Vr is 70 V; (3): forward voltage(VF) is 715 mV max when IF is 1 mA.