Features: · Extremely low leakage current: max. 5 pA· Low diode capacitance· Light insensitive.Application· Clamping· Holding· Peak follower· Time delay circuits· Logarithmic amplifiers· Protection of insulated gate field-effect transistors.Specifications Symbol Parameter Conditions Min M...
BAV45: Features: · Extremely low leakage current: max. 5 pA· Low diode capacitance· Light insensitive.Application· Clamping· Holding· Peak follower· Time delay circuits· Logarithmic amplifiers· Protection ...
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Symbol | Parameter | Conditions | Min | Max | Unit |
VRRM | repetitive peak reverse voltage | - | 35 | V | |
VR | continuous reverse voltage | - | 20 | V | |
IF | continuous forward current | see Fig.2 | - | 50 | mA |
IFRM | repetitive peak forward current | - | 100 | mA | |
Ptot | total power dissipation | Tamb =25; note 1 | - | 200 | mW |
Tstg | storage temperature | -65 | +125 | ||
Tj | junction temperature | - | 125 |
Silicon diode in a metal TO-18 can. BAV45 has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light.