Specifications Parameter Symbol Values Unit Reverse voltage VR 80 V Forward current Ptot 130 mA Power dissipation, TS 60°C IFS 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg (R)C 55 + 1
BAT 68: Specifications Parameter Symbol Values Unit Reverse voltage VR 80 V Forward current Ptot 130 mA Power dissipation, TS 60°C IFS 150 mW Junction temperature Tj 150 °C ...
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Schottky (Diodes & Rectifiers) Silicon Schottky Diodes 4V 110mA
Features: • DBS mixer applications to 12 GHz• Low noise figure• Low barrier type...