Features: • Low Barrier diode for detectors up to GHz frequenciesSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Junction temperature Tj 150 °C Storage temperature Tstg - 55 ...+150 ...
BAT 62-03W: Features: • Low Barrier diode for detectors up to GHz frequenciesSpecifications Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.18 - .19 / Piece
Schottky (Diodes & Rectifiers) Silicon Schottky Diodes 4V 110mA
Parameter |
Symbol |
Value |
Unit |
Diode reverse voltage |
VR |
40 |
V |
Forward current |
IF |
40 |
mA |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
- 55 ...+150 |
°C |
Total power dissipation TS 85°C |
Ptot |
100 |
mW |
Junction - ambient 1) |
RthJA |
650 |
K/W |
Junction - soldering point |
RthJS |
810 |
K/W |