BAT760

Features: · Ultra high-speed switching· Very low forward voltage· Guard ring protected· Very small SMD plastic package.Application· Ultra high-speed switching· Voltage clamping· Protection circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous revers...

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BAT760 Picture
SeekIC No. : 004296555 Detail

BAT760: Features: · Ultra high-speed switching· Very low forward voltage· Guard ring protected· Very small SMD plastic package.Application· Ultra high-speed switching· Voltage clamping· Protection circuits....

floor Price/Ceiling Price

Part Number:
BAT760
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Ultra high-speed switching
· Very low forward voltage
· Guard ring protected
· Very small SMD plastic package.





Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits.





Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER
CONDITIONS MIN.
MAX. UNIT
VR continuous reverse voltage - 20 V
IF continuous forward current - 1 A
IFSM non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
- 5 A
Tstg storage temperature -65 +150 °C
Tj junction temperature - 125 °C
Tamb operating ambient temperature -65 +125 °C


Product Type Schottky
Part Number BAT760
Max Average Rectified Current IO (A) 1
@ Terminal Temperature TT (oC) 25
Peak Repetitive Reverse Voltage VRRM (V) 30
Peak Forward Surge Current IFSM (A) 5.5
Forward Voltage Drop VF (V) 0.55
@ IF (A) 1
Max Reverse Current IR (mA) 0.05
@ VR (V) 15
Total Capacitance CT (pF) 25





Description

The BAT760 is a type of Schottky barrier diode which has three unique features: (1): ultra high-speed switching; (2): very low forward voltage; (3): guard ring protected; (4): very small SMD plastic package.It can be used in ultra high-speed switching,voltage clamping and protection circuits.

There are some limiting values about BAT760. (1): continuous reverse voltage(VR) is 20 V max; (2): continuous forward current(IF) is 1 A max; (3): non-repetitive peak forward current(IFSM,t = 8.3 ms half sinewave, JEDEC method) is 5 A max; (4): storage temperature(Tstg) is -65°C +150°C; (5): junction temperature(Tj) is 125 °C max; (6): operating ambient temperature(Tamb) is -65°C +125°C.

Otherwise,there are some electrical characteristics about BAT760 when Tamb is 25,unless otherwise specified. (1): continuous forward voltage(VF) is 240 mV typ and 270 mV max when IF is 10 mA; (2): reverse current(IR) is 5 uA typ and 10 uA max when Vr is 5 V; (3): diode capacitance(Cd) is 19 pF typ and 25 pF max when Vr is 5 V, f is 1 MHz.













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