Position: Home  > All Categories> Integrated Circuits (ICs) > BAT754L

BAT754L

Features: · Very low forward voltage· Guard ring protected· Low diode capacitance· Three independent diodes in a small plastic SMD package.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes· Low power consumption applications (e.g. hand-held application...

product image

BAT754L Picture
See larger image
SeekIC No. : 004296554 Detail

BAT754L: Features: · Very low forward voltage· Guard ring protected· Low diode capacitance· Three independent diodes in a small plastic SMD package.Application· Ultra high-speed switching· Voltage clamping· ...

BAT754L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BAT754L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Very low forward voltage
· Guard ring protected
· Low diode capacitance
· Three independent diodes in a small plastic SMD package.




Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits
· Blocking diodes
· Low power consumption applications (e.g. hand-held applications).




Pinout

Connection Diagram




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR continuous reverse voltage - 30 V
IF continuous forward current - 200 mA
IFRM repetitive peak forward current tp <1 s; <0.5 - 300 mA
IFSM non-repetitive peak forward current tp < 10 ms - 600 mA
Tstg storage temperature -65 +150 °C
Tj junction temperature - 125 °C
Tamb operating ambient temperature -65 +125 °C





Description

Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Discrete Semiconductor Products
T508N12TOF
MUR20040
Filters
PICO2205A
PICO2204A
Prototyping Products
AVT4168
DE1
Optical Inspection Equipment
AA924
A21K4B
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more