Features: ·Low barrier diode for detectors up to GHz frequenciesSpecifications Parameter Symbol Rating Unit Diode reverse voltage VRM 40 V Forward current VR 20 V Total power dissipation; TS 105 IFM 100 mA Junction temperature Tj 150 ...
BAT62-09S: Features: ·Low barrier diode for detectors up to GHz frequenciesSpecifications Parameter Symbol Rating Unit Diode reverse voltage VRM 40 V Forward current VR 20 ...
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Parameter |
Symbol |
Rating |
Unit |
Diode reverse voltage |
VRM |
40 |
V |
Forward current |
VR |
20 |
V |
Total power dissipation; TS 105 |
IFM |
100 |
mA |
Junction temperature |
Tj |
150 |
|
Storage temperature range |
Tstg |
-55 to +150 |
|
Junction - soldering point1) BAT62-08S BAT62-09S |
RthJS |
450 tbd |
K/W |