BAS85

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Mounting Style :
Package / Case :
Packaging :


Features:

· For general purpose applications
· This diode features low turn-on voltage.
The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
· This diode is also available in a DO-35 case with type designation BAT85.




Specifications

	Symbol	Value	Unit
Continuous Reverse Voltage	VR	30	V
Forward Continuous Current at Tamb = 25	IF	2001)	mA
Peak Forward Current at Tamb = 25	IFM	3001)	mA
Surge Forward Current at tp < 1 s, Tamb = 25	IFSM	6001)	mA
Power Dissipation at Tamb = 65	Ptot	2001)	mW
Junction Temperature	Tj	125
Storage Temperature Range	TS	55 to +150
1) Valid provided that electrodes are kept at ambient temperature.

Description

The BAS85 is a type of schottky diodes which has three unique features: (1) for general purpose applications; (2) this diode features low turn-on voltage and the devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges; (3) this diode is also available in a DO-35 case with type designation BAT85.

There are some maximum ratings and electrical characteristics about BAS85.(1): continuous reverse voltage(VR) is 30 V; (2): forward continuous current(IF,Tamb = 25 °C) is 200 mA; (3): peak forward current(IFM,Tamb = 25 °C) is 300 mA; (4): surge forward current(IFSM,tp < 1 s, Tamb = 25 °C) is 600 mA; (5): power dissipation(Ptot,Tamb = 65 °C) is 200 mW; (6): junction temperature(Tj) is 125 °C; (7): storage temperature range(TS) is 55°C to +150°C.

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