Features: · Low diode capacitance· Low forward voltage· Guard ring protected· High breakdown voltage· Leadless ultra small plastic package (1 mm×0.6 mm×0.5 mm)· Boardspace 1.17 mm2 (approx. 10% of SOT23)· Power dissipation comparable to SOT23.Application· Ultra high-speed switching· Voltage clampi...
BAS70L: Features: · Low diode capacitance· Low forward voltage· Guard ring protected· High breakdown voltage· Leadless ultra small plastic package (1 mm×0.6 mm×0.5 mm)· Boardspace 1.17 mm2 (approx. 10% of S...
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SYMBOL | PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
VR | continuous reverse voltage | - |
70 |
V | |
IF | continuous forward curren | - |
70 |
mA | |
IFRM | repetitive peak forward current | tp 1 s; 0.5 | - |
70 |
mA |
IFSM | non-repetitive peak forward current | tp < 10 ms | - |
100 |
mA |
Tstg | storage temperature | -65 |
+150 |
||
Tj | junction temperature | - |
150 |
Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a BAS70L leadless ultra small plastic package.