Features: · LOW DIODE CAPACITANCE· LOW SERIES INDUCTANCE AND RESISTANCE· SURFACE MOUNT PACKAGEPinoutSpecifications Symbol Parameter Value Unit VR Continuous reverse voltage 70 V IF Continuous forward current 70 mA IFRM Repetitive peak forward current 70 ...
BAS70-07S: Features: · LOW DIODE CAPACITANCE· LOW SERIES INDUCTANCE AND RESISTANCE· SURFACE MOUNT PACKAGEPinoutSpecifications Symbol Parameter Value Unit VR Continuous reverse voltage 70 ...
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Symbol |
Parameter |
Value |
Unit | |
VR | Continuous reverse voltage |
70 |
V | |
IF | Continuous forward current |
70 |
mA | |
IFRM | Repetitive peak forward current |
70 |
mA | |
IFSM | Surge non repetitive forward current | tp = 10 ms sinusoidal |
1 |
A |
P | Power Dissipation | Ta = 55°C |
250 |
mW |
Tstg | Storage temperature range |
- 65 to +150 |
||
Tj | Maximum junction temperature |
150 |
||
TL | Maximum temperature for soldering |
260 |
Dual and Triple Schottky diode in BAS70-07S package. This diode is intented to be used in RF application for signal detection and temperature compensation.