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BAS69

Features: Low diode capacitance Designed for RF applications Low profile packages Very low parasitic inductor and resistorSpecifications Symbol Parameter Value Unit VRRMIF Repetitive peak reverse voltageContinuous forward current 1510 VmA IFSM Surge non repetit...

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SeekIC No. : 004296282 Detail

BAS69: Features: Low diode capacitance Designed for RF applications Low profile packages Very low parasitic inductor and resistorSpecifications Symbol Parameter Value Unit VRRMIF Rep...

BAS69 Data Sheet

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Part Number:
BAS69
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low diode capacitance
Designed for RF applications
Low profile packages
Very low parasitic inductor and resistor


Specifications

Symbol
Parameter
Value
Unit

VRRM
IF
Repetitive peak reverse voltage
Continuous forward current
15
10
V
mA

 IFSM

 Surge non repetitive forward current Half wave, single phase 60 Hz

 2

 A

 Tstg
Tj
TL

  Storage temperature range
Maximum operating junction temperature (1)
Maximum soldering temperature(1)

 -65 to +150
150
260

 °C

1. Pulse test: tp = 380 µs, < 2 %


Description

The BAS69 series use 15V barrier, with extremely low junction capacitance, suitable for the detection of an RF signal and the compensation of the voltage drift with the temperature.

The presented packages make BAS69 ideal in applications where space saving is critical. The low junction capacitance will reduce the disturbance on the RF signal.




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