Features: Low diode capacitance Designed for RF applications Low profile packages Very low parasitic inductor and resistorSpecifications Symbol Parameter Value Unit VRRMIF Repetitive peak reverse voltageContinuous forward current 1510 VmA IFSM Surge non repetit...
BAS69: Features: Low diode capacitance Designed for RF applications Low profile packages Very low parasitic inductor and resistorSpecifications Symbol Parameter Value Unit VRRMIF Rep...
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Symbol |
Parameter |
Value |
Unit |
VRRM |
Repetitive peak reverse voltage Continuous forward current |
15 10 |
V mA |
IFSM |
Surge non repetitive forward current Half wave, single phase 60 Hz |
2 |
A |
Tstg |
Storage temperature range Maximum operating junction temperature (1) Maximum soldering temperature(1) |
-65 to +150 |
°C |
The BAS69 series use 15V barrier, with extremely low junction capacitance, suitable for the detection of an RF signal and the compensation of the voltage drift with the temperature.
The presented packages make BAS69 ideal in applications where space saving is critical. The low junction capacitance will reduce the disturbance on the RF signal.