Features: · Ultra small plastic SMD package· High switching speed: max. 4 ns· Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 85 V· Repetitive peak forward current: max. 500 mA.Application· High-speed switching in e.g. surface mounted circuits.Specifications Symbo...
BAS516: Features: · Ultra small plastic SMD package· High switching speed: max. 4 ns· Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 85 V· Repetitive peak forward current: max....
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Diodes (General Purpose, Power, Switching) SW 75V 250MA HS
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Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11
Symbol | Parameter | Conditions | Min | Max | Unit |
VR | continuous reverse voltage | - | 75 | V | |
VRRM | repetitive peak reverse voltage | - | 85 | V | |
IF | continuous forward current | T s =90°C; note 1; see Fig.1 | - | 250 | mA |
IFRM | repetitive peak forward current | - | 500 | mA | |
IFSM | non-repetitive peak forward curren | square wave; Tj = 25 °C prior to surge; see Fig.3 t = 1 s t = 1 ms t = 1 s |
- - - |
4 1 0.5 |
A A A |
Ptot | total power dissipation | T s =90°C; note 1 | - | 500 | mW |
Tstg | storage temperature | - | +150 | ||
Tj | junction temperature | -65 | 150 |
The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package.
The BAS516 is a high-speed switching diode. It is fabricated in planar technology,and encapsulated in the SOD523 plastic package. It can be used in high-speed switching in e.g.surface mounted ciircuits.
There are some features about BAS516. (1) ultra samll plastic package; (2) high switching speed which is 4 ns; (3) continuous reverse voltage which is 75 V; (4) repetitive peak reverse volatge which is 85 V; (5) repetitive peak forward current which is 500 mA.
What comes next is about BAS516's absolute maximum ratings. (1): continuous forward current is 250 mA when Ts is 90 ; (2): the maximum non-repetitive peak forward current is 4 A when t is 1 s,and is 1 A at t is 1 ms and is 0.5 A at t is 1 s; (3): the maximum total power dissipation is 500 mW when Ts is 90 ; (4): storage temperature is from -65 to 150 ; (5): junction temperature is 150 . Then is about its elecrtrical characters at Tj is 25 . (1): the maximum forward voltage is 715 mV at IF is 1 mA,and is 855 mV at IF is 10 mA and is 1 V at IF is 50 mA; (2): the reverse current is 30 nA at VR is 25 V,and is 1 A at VR is 75 V and is 30 A at VR is 25 V,Tj is 150 ; (3): diode capacitance is 1 pF when f is 1 MHz and VR is 0.