BAS40W

Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.PinoutSpecifications Part Number BAS40W Power Rating (mW) 200 Peak Repetitive Reverse ...

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SeekIC No. : 004296264 Detail

BAS40W: Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.P...

floor Price/Ceiling Price

Part Number:
BAS40W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Low forward voltage
· Guard ring protected
· Very small SMD package
· Low diode capacitance.





Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits
· Blocking diodes.





Pinout

  Connection Diagram




Specifications

Part Number BAS40W
Power Rating (mW) 200
Peak Repetitive Reverse Voltage VRRM (V) 40
Forward Continuous Current IFM (mA) 200
Forward Voltage Drop VF (V) 0.38
@ IF (mA) 1
Max Reverse Current IR (µA) 0.2
@ VR (V) 30
Capacitance CTOT (typ) (pF) 5


SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR continuous reverse voltage - 40 V
IF continuous forward current - 120 mA
IFRM repetitive peak forward current tp 1 s;0.5 - 120 mA
IFSM non-repetitive peak forward current tp < 10 ms - 200 mA
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C





Description

Planar Schottky barrier diodes encapsulated in a BAS40W very small plastic SMD package. Single diodes and double diodes with different pinning are available.






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