Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.PinoutSpecifications Part Number BAS40W Power Rating (mW) 200 Peak Repetitive Reverse ...
BAS40W: Features: · Low forward voltage· Guard ring protected· Very small SMD package· Low diode capacitance.Application· Ultra high-speed switching· Voltage clamping· Protection circuits· Blocking diodes.P...
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Part Number | BAS40W |
Power Rating (mW) | 200 |
Peak Repetitive Reverse Voltage VRRM (V) | 40 |
Forward Continuous Current IFM (mA) | 200 |
Forward Voltage Drop VF (V) | 0.38 |
@ IF (mA) | 1 |
Max Reverse Current IR (µA) | 0.2 |
@ VR (V) | 30 |
Capacitance CTOT (typ) (pF) | 5 |
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VR | continuous reverse voltage | - | 40 | V | |
IF | continuous forward current | - | 120 | mA | |
IFRM | repetitive peak forward current | tp 1 s;0.5 | - | 120 | mA |
IFSM | non-repetitive peak forward current | tp < 10 ms | - | 200 | mA |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C |
Planar Schottky barrier diodes encapsulated in a BAS40W very small plastic SMD package. Single diodes and double diodes with different pinning are available.