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BAS40L

Features: · Low diode capacitance· Low forward voltage· Guard ring protected· High breakdown voltage· Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm)· Boardspace 1.17 mm2 (approx. 10% of SOT23)· Power dissipation comparable to SOT23.Application· Ultra high-speed switching· Voltage cl...

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SeekIC No. : 004296252 Detail

BAS40L: Features: · Low diode capacitance· Low forward voltage· Guard ring protected· High breakdown voltage· Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm)· Boardspace 1.17 mm2 (approx. 10% ...

BAS40L Data Sheet

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Part Number:
BAS40L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· Low diode capacitance
· Low forward voltage
· Guard ring protected
· High breakdown voltage
· Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm)
· Boardspace 1.17 mm2 (approx. 10% of SOT23)
· Power dissipation comparable to SOT23.


Application

· Ultra high-speed switching
· Voltage clamping
· Protection circuits
· Mobile communication, digital (still) cameras, PDAs and PCMCIA cards.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VR continuous reverse voltage   - 40 V
IF continuous forward current   - 120 mA
IFRM repetitive peak forward current tp 1s; 0.5 - 120 mA
IFSM non-repetitive peak forward current tp < 10 ms - 200 mA
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C



Description

Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a BAS40L leadless ultra small plastic package.


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