Features: · Low forward voltage· Absorbs very high surge pulse· Low capacitance· Ultra small SMD plastic package· Flat leads giving excellent coplanarity and improved thermal behaviour. Application· Ultra high-speed switching· Voltage clamping· Board space critical applications.PinoutSpecification...
BAS40-05V: Features: · Low forward voltage· Absorbs very high surge pulse· Low capacitance· Ultra small SMD plastic package· Flat leads giving excellent coplanarity and improved thermal behaviour. Application·...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VR | continuous reverse voltage | - | 40 | V | |
IF | continuous forward current | - | 120 | mA | |
IFRM | repetitive peak forward current | tp <1 s; <0.5 | - | 120 | mA |
IFSM | non-repetitive peak forward current | t = 8.3 ms half sinewave; JEDEC method |
- | 200 | mA |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | operating ambient temperature | -65 | +150 | °C |
The BAS40-05V consists of two dual Schottky barrier diodes with common cathodes and integrated guard ringfor stress protection.
Two separate dice are encapsulated in a SOT666 ultra small SMD plastic package.