BAS32L215

The BAS32L215 is designed as one kind of high-speed switching diode that can be used in (1)high-speed switching; (2)fast logic applications. Features of this device are:(1)Small hermetically sealed glass SMD package; (2)High switching speed: max. 4 ns; (3)Continuous reverse voltage: max. 75 V; (4)Repetitive peak reverse voltage: max. 75 V; (5)Repetitive peak forward current: max. 450 mA.

The absolute maximum ratings of the BAS32L215 can be summarized as:(1)repetitive peak reverse voltage: 75 V;(2)continuous reverse voltage: 75 V;(3)continuous forward current: 200 mA;(4)repetitive peak forward current: 450 mA;(5)total power dissipation: 500 mW;(6)storage temperature: -65 to +200 °C;(7)junction temperature: 200 °C.

The electrical characteristics of the BAS32L215 can be summarized as:(1)reverse breakdown voltage: 100 V;(2)diode capacitance: 2 pF;(3)reverse recovery time: 4 ns;(4)forward recovery voltage: 2.5 V;(5)thermal resistance from junction to tie-point: 300 K/W;(6)thermal resistance from junction to ambient: 350 K/W. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.